Field Effect Transistors: Ionic-Liquid Gating of InAs Nanowire-Based Field-Effect Transistors (Adv. Funct. Mater. 3/2019)
نویسندگان
چکیده
منابع مشابه
Field dependent transport properties in InAs nanowire field effect transistors.
We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimen...
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Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2019
ISSN: 1616-301X
DOI: 10.1002/adfm.201970014